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BSC010NE2LSI OptiMOS 25V N Channel Power MOSFET For Onboard Charger Mainboard

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BSC010NE2LSI OptiMOS 25V N Channel Power MOSFET For Onboard Charger Mainboard

Brand Name : Infineon

Model Number : BSC010NE2LSI

Certification : ROHS

Place of Origin : Malaysia

MOQ : 1pieces

Price : Negotiated

Payment Terms : T/T, Western Union

Supply Ability : 5000PCS

Delivery Time : 5 working days

Packaging Details : REEL

Application : Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control

Details : BSC010NE2LSI OptiMOS 25V N-Channel Power MOSFET

Products Name : Integrated circuits(IC)

Category : Electronic Components

IC Family : Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single

Other Name : BSC010

Package : TDSON8

Lead free status : RoHS Compliant, PB Free, Lead Free

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BSC010NE2LSI OptiMOS 25V N-Channel Power MOSFET for Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control

Applications:

Onboard charger
Mainboard
Notebook
DC-DC
VRD/VRM
LED
Motor control

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs

and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages,

make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Benefits :

Save overall system costs by reducing the number of phases in multiphase converters
Reduce power losses and increase efficiency for all load conditions
Save space with smallest packages like CanPAK™, S3O8 or system in package solution
Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in.

BSC010NE2LSI OptiMOS 25V N Channel Power MOSFET For Onboard Charger Mainboard

Specifications:

Category
Discrete Semiconductor Products
　
Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN
Base Product Number
BSC070
Parametrics BSC070N10NS3G
Ciss 3000 pF
Coss 520 pF
ID (@25°C) max 90 A
IDpuls max 360 A
Operating Temperature min max -55 °C 150 °C
Ptot max 114 W
Package SuperSO8 5x6
Polarity N
QG (typ @10V) 42 nC
RDS (on) (@10V) max 7 mΩ
Rth 1.1 K/W
VDS max 100 V
VGS(th) min max 2.7 V 2 V 3.5 V

BSC010NE2LSI OptiMOS 25V N Channel Power MOSFET For Onboard Charger Mainboard


Product Tags:

OptiMOS 25V N Channel Power MOSFET

      

BSC010NE2LSI N Channel Power MOSFET

      

BSC010NE2LSI OptiMOS 25V

      
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