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IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor

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IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor

Name: IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor
Brand: Infineon Technologies/International Rectifier IOR
Price: 1 USD

Best IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor wholesale

Brand Name : Infineon Technologies/International Rectifier IOR

Model Number : IHW30N160R2FKSA1

Certification : ROHS

Place of Origin : CHINA

MOQ : 10pieces

Price : Negotiated

Payment Terms : T/T, Western Union

Supply Ability : 500000pcs

Delivery Time : 2-15days

Packaging Details : Standard package

Family : Discrete Semiconductor Products

Category : Electronic Components-IGBTs Transistors

IGBT TYPE : NPT, Trench Field Stop

Base part number : H30R1602

Details : IGBT 1600V 60A 312W TO247-3

Applications : Inductive Cooking ，Soft Switching Applications

Description : IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1

Package : TO247

Mounting Type : Through hole

Stock : In Stock

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IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series

Applications:
• Inductive Cooking
• Soft Switching Applications

Description:

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1
for target applications
• Pb-free lead plating; RoHS compliant

Specification:IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1

Part number	IHW30N160R2
Category	Discrete Semiconductor Products
	Transistors - IGBTs - Single
Series	TrenchStop®
Package	Tube
IGBT Type	NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1600 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	90 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 30A
Power - Max	312 W
Switching Energy	4.37mJ
Input Type	Standard
Gate Charge	94 nC
Td (on/off) @ 25°C	-/525ns
Test Condition	600V, 30A, 10Ohm, 15V
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3-1

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095

Part number	IHW30N160R2FKSA1
Base part number	IHW30N160R2

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95

IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor

Substitutes (1):

IXGH24N170 IXYS

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